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| Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Collector current (d.c. value) Total power dissipation up to Tamb = 25 C D.C. current gain IC = 10mA; VCE = 1 V IC = 100 mA; VCE = 2 V Storage time ICon = IBon = IBoff = 10 mA VCB0 VCES VCE0 IC Ptot hFE hFE ts max. max. max. max. max. 40 40 15 500 250 V V V mA mW > < 40 to 120 20 13 ns Continental Device India Limited Data Sheet Page 1 of 3 CMBT2369 RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c. value) Total power dissipation up to Tamb = 25 C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient in free air VCB0 VCES VCE0 VEB0 IC Ptot Tstg Tj Rth j-a max. max. max. max. max. max. -55 to max. = 40 V 40 V 15 V 4,5 V 500 mA 250 mW 150 C 150 C 500 K/W CHARACTERISTICS (at TA = 25C unless otherwise specified) Tj = 25 C unless otherwise specified Collector cut-off current ICB0 IE = 0; VCB = 20 V ICB0 IE = 0; VCB = 20V; Tj = 125C Saturation voltages VCEsat IC = 10 mA; lB = 1 mA VBEsat D.C. current gain hFE IC = 10mA; VCE = 1 V hFE IC = 10mA; VCE = 1 V; Tamb = -55C hFE IC = 100 mA; VCE = 2 V Output capacitance at f = 1 MHz Co IE = 0; VCB = 5V Small-signal current gain hfe IC = 1,0mA; VCE = 10V; f = 100MHz; Tamb = 25C Breakdown voltages V(BR)CEO IC = 10 mA; lB = 0 V(BR)CBO IC = 10A; IE = 0 V(BR)EBO IC = 0; IE = 10A V(BR)CES IC = 10A; VBE = 0 Switching times at Tamb = 25 C Storage time ICon = IBon = -IBoff = 10 mA Turn-on time IC = 10mA; IBon = 3mA; VCC = 3V Turn-off time IC = 10mA; IBon = 3mA; IBoff = 1,5mA; VCC = 3V < < 400 nA 30 A < 0,25 V 0,70 to 0,85 V 40 to 120 20 20 4,0 pF 5,0 15 40 4,5 40 V V V V > > < > min. min. min. min. ts t on t on toff toff typ. < typ. < typ. < 5,0 ns 13 ns 8,0 12 10 18 ns ns ns ns Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of |
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